International Center for Materials Nanoarchitectonic and Photocatalytic Materials Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
Chemistry. 2010 May 3;16(17):5184-90. doi: 10.1002/chem.200902490.
A novel molecule template assisted chemical co-reduction method has been successfully developed for the controlled synthesis of ultrathin beta-SiC single-crystalline nanowires on a large scale. The ultrathin beta-SiC single-crystalline nanowires are about 8 nm in diameter and 200-800 nm in length. The resulting thin beta-SiC single-crystalline nanowire is new in the family of beta-SiC one-dimensional (1D) nanostructures. A synergistic action of pi-stacking and steric hindrance result from the 1,10-phenanthroline molecule template are proposed to explain the growth mechanism of the ultrathin beta-SiC single-crystalline nanowires based on the experimental observation. Importantly, such ultrathin beta-SiC nanowire has shown a strong structure-induced enhancement of photoluminescence properties and has exhibited a very strong green light emission, which can be seen by naked eye. Furthermore, the unique beta-SiC ultrathin nanowire structure exhibits a low turn-on field (3.57 V microm(-1)) and a large field-emission current density (20 mA cm(-2)). These results suggest that the ultrathin beta-SiC nanowires can be expected to find promising applications as field emitters and photoelectronic devices.
一种新颖的分子模板辅助化学共还原方法被成功开发出来，用于在大规模上控制合成超薄β-SiC 单晶纳米线。所得到的超薄β-SiC 单晶纳米线的直径约为 8nm，长度为 200-800nm。这种超薄β-SiC 单晶纳米线在β-SiC 一维（1D）纳米结构家族中是全新的。基于实验观察，提出了 1,10-菲咯啉分子模板的π堆积和空间位阻的协同作用来解释超薄β-SiC 单晶纳米线的生长机制。重要的是，这种超薄β-SiC 纳米线表现出了很强的结构诱导增强的光致发光性能，并表现出非常强的绿光发射，肉眼可见。此外，独特的β-SiC 超薄纳米线结构表现出低开启电场（3.57V/μm）和大场发射电流密度（20mA/cm²）。这些结果表明，超薄β-SiC 纳米线有望作为场发射器和光电设备得到广泛应用。
