Ha Byeongchul, Seo Sung Ho, Cho Jung Hee, Yoon Chong S, Yoo Jinkyoung, Yi Gyu-Chul, Park Chong Yun, Lee Cheol Jin
Department of Nanotechnology, Hanyang University, Seoul 133-791, Korea.
J Phys Chem B. 2005 Jun 9;109(22):11095-9. doi: 10.1021/jp044334c.
Thin high-quality gallium nitride (GaN) nanowires were synthesized by a catalytic chemical vapor deposition method. The synthesized GaN nanowires with hexagonal single-crystalline structure had thin diameters of 10-50 nm and lengths of tens of micrometers. The thin GaN nanowires revealed UV bands at 3.481 and 3.285 eV in low-temperature PL measurements due to the recombination of donor-bound excitons and donor-acceptor pairs, respectively. The blue shifts of UV bands in the low-temperature PL measurement were observed, indicating quantum confinement effects in the thin GaN nanowires which have smaller diameters than the exciton Bohr radius, 11 nm. For field emission properties of GaN nanowires, the turn-on field of GaN nanowires was 8.5 V/microm and the current density was about 0.2 mA/cm(2) at 17.5 V/microm, which is sufficient for the applications of field emission displays and vacuum microelectronic devices. Moreover, the GaN nanowires indicated stronger emission stability compared with carbon nanotubes.
通过催化化学气相沉积法合成了高质量的细氮化镓（GaN）纳米线。合成的具有六方单晶结构的GaN纳米线直径很细，为10 - 50 nm，长度为几十微米。在低温光致发光测量中，细GaN纳米线分别由于施主束缚激子和施主 - 受主对的复合，在3.481和3.285 eV处显示出紫外带。在低温光致发光测量中观察到紫外带的蓝移，这表明在直径小于激子玻尔半径11 nm的细GaN纳米线中存在量子限制效应。对于GaN纳米线的场发射特性，GaN纳米线的开启场为8.5 V/μm，在17.5 V/μm时电流密度约为0.2 mA/cm²，这对于场发射显示器和真空微电子器件的应用来说是足够的。此外，与碳纳米管相比，GaN纳米线表现出更强的发射稳定性。
