Department of Neurology and Neurological Sciences, Stanford University School of Medicine, 300 Pasteur Drive, Stanford, CA 94305, USA.
Cereb Cortex. 2010 Dec;20(12):2926-38. doi: 10.1093/cercor/bhq040. Epub 2010 Mar 25.
Cortical dysplasias frequently underlie neurodevelopmental disorders and epilepsy. Rats with a neonatally induced cortical microgyrus [freeze-lesion (FL)], a model of human polymicrogyria, display epileptiform discharges in vitro. We probed excitatory and inhibitory connectivity onto neocortical pyramidal neurons in layers 2/3 and 5 of postnatal day 16-22 rats, approximately 1-2 mm lateral of the lesion, using laser scanning photostimulation (LSPS)/glutamate uncaging. Excitatory input from deep and supragranular layers to layer 5 pyramidal cells was greater in FL cortex, while no significant differences were seen in layer 2/3 cells. The increased input was due to a greater number of LSPS-evoked excitatory postsynaptic currents (EPSCs), without differences in amplitude or kinetics. Inhibitory input was increased in a region-specific manner in pyramidal cells in FL cortex, due to an increased inhibitory postsynaptic current (IPSC) amplitude. Connectivity within layer 5, parts of which are destroyed during lesioning, was more severely affected than connectivity in layer 2/3. Thus, we observed 2 distinct mechanisms of altered synaptic input: 1) increased EPSC frequency suggesting an increased number of excitatory synapses and 2) higher IPSC amplitude, suggesting an increased strength of inhibitory synapses. These increases in both excitatory and inhibitory connectivity may limit the extent of circuit hyperexcitability.
皮质发育不良常导致神经发育障碍和癫痫。新生大鼠皮质微脑回(冷冻损伤(FL))是人类多微小脑回的模型,在体外显示癫痫样放电。我们使用激光扫描光刺激(LSPS)/谷氨酸解笼技术,探测出生后第 16-22 天的大鼠、约距损伤 1-2mm 处的 2/3 层和 5 层新皮层锥体神经元的兴奋性和抑制性连接。FL 皮质中来自深层和超颗粒层的 5 层锥体细胞的兴奋性输入大于 FL 皮质,而 2/3 层细胞没有明显差异。增加的输入是由于 LSPS 诱发的兴奋性突触后电流(EPSC)数量增加,而幅度和动力学没有差异。FL 皮质中的锥体细胞以区域特异性方式增加抑制性输入,这是由于抑制性突触后电流(IPSC)幅度增加所致。在损伤过程中部分破坏的 5 层内的连接比 2/3 层内的连接受到更严重的影响。因此,我们观察到两种改变突触输入的不同机制:1)EPSC 频率增加表明兴奋性突触数量增加,2)IPSC 幅度增加,表明抑制性突触强度增加。兴奋性和抑制性连接的增加都可能限制回路过度兴奋的程度。