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石墨烯中的扩展缺陷作为金属线。

An extended defect in graphene as a metallic wire.

机构信息

Department of Physics, University of South Florida, Tampa, FL 33620, USA.

出版信息

Nat Nanotechnol. 2010 May;5(5):326-9. doi: 10.1038/nnano.2010.53. Epub 2010 Mar 28.

Abstract

Many proposed applications of graphene require the ability to tune its electronic structure at the nanoscale. Although charge transfer and field-effect doping can be applied to manipulate charge carrier concentrations, using them to achieve nanoscale control remains a challenge. An alternative approach is 'self-doping', in which extended defects are introduced into the graphene lattice. The controlled engineering of these defects represents a viable approach to creation and nanoscale control of one-dimensional charge distributions with widths of several atoms. However, the only experimentally realized extended defects so far have been the edges of graphene nanoribbons, which show dangling bonds that make them chemically unstable. Here, we report the realization of a one-dimensional topological defect in graphene, containing octagonal and pentagonal sp(2)-hybridized carbon rings embedded in a perfect graphene sheet. By doping the surrounding graphene lattice, the defect acts as a quasi-one-dimensional metallic wire. Such wires may form building blocks for atomic-scale, all-carbon electronics.

摘要

许多石墨烯的应用都需要在纳米尺度上调节其电子结构的能力。虽然电荷转移和场效应掺杂可用于控制载流子浓度,但要实现纳米级控制仍具有挑战性。另一种方法是“自掺杂”,即在石墨烯晶格中引入扩展缺陷。这些缺陷的可控工程是实现具有几个原子宽度的一维电荷分布的创建和纳米级控制的可行方法。然而,迄今为止,唯一在实验中实现的扩展缺陷是石墨烯纳米带的边缘,它们具有悬键,使其化学不稳定。在这里,我们报告了在石墨烯中实现了一种一维拓扑缺陷,其中包含嵌入在完美石墨烯片中的八边形和五边形 sp(2)杂化的碳环。通过掺杂周围的石墨烯晶格,该缺陷充当准一维金属线。这种线可能成为原子级全碳电子学的构建模块。

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