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作为碳化硅/碳复合材料增强体的碳化硅织物上碳纳米管的生长。

Growth of carbon nanotubes on silicon carbide fabric as reinforcement for SiC/C composites.

作者信息

Manocha L M, Pande Rajesh

机构信息

Department of Materials Science, Sardar Patel University, Vallabh Vidyanagar, India Vallabh Vidyanagar 388120, Gujarat, India.

出版信息

J Nanosci Nanotechnol. 2010 Jun;10(6):3822-7. doi: 10.1166/jnn.2010.1968.

Abstract

Carbon nanotubes (CNTs) have been grown on conventional silicon carbide (SiC) fabric by the catalytic chemical vapour deposition (CCVD) technique. These hybrid reinforcements have been used to develop Silicon carbide-carbon nanotube-carbon matrix mini-composites (SiC/CNTs/C) by chemical vapour infiltration (CVI) method. The microstructures of these hybrid materials and their composites have been studied using scanning electron microscope (SEM), transmission electron microscope (TEM) and Raman spectroscope. The microstructure of the carbon matrix has been compared with the silicon carbide-carbon matrix composites (SiC/C) made with SiC fabric alone. It has been found that the carbon matrix exhibit orientation circumferentially around the SiC fibers. In case of composites with CNTs coated SiC fibers, the carbon matrix is found to get infiltrated within the bundles of CNTs whereas at distance away from the CNTs, the matrix is found to be oriented circumferentially around the SiC/CNT bundles. SiC/CNT/C composites are found to exhibit inherent intrabundle porosity and lower density.

摘要

通过催化化学气相沉积(CCVD)技术,在传统碳化硅(SiC)织物上生长了碳纳米管(CNT)。这些混合增强材料已被用于通过化学气相渗透(CVI)方法开发碳化硅 - 碳纳米管 - 碳基体微型复合材料(SiC/CNTs/C)。使用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和拉曼光谱仪研究了这些混合材料及其复合材料的微观结构。将碳基体的微观结构与仅由SiC织物制成的碳化硅 - 碳基体复合材料(SiC/C)进行了比较。已发现碳基体在SiC纤维周围呈周向取向。在具有涂覆CNT的SiC纤维的复合材料中,发现碳基体渗透到CNT束内,而在远离CNT的地方,发现基体在SiC/CNT束周围呈周向取向。发现SiC/CNT/C复合材料具有固有的束内孔隙率和较低的密度。

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