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硅-氧化硅核壳纳米颗粒薄膜的制备及其温度依赖光致发光特性

Fabrication and temperature-dependent photoluminescence of silicon-silicon oxide core-shell nanoparticle thin film.

作者信息

Lin Sheng-Wei, Chen Dong-Hwang

机构信息

Department of Chemical Engineering, National Cheng Kung University, Tainan, Taiwan 701, Taiwan.

出版信息

J Nanosci Nanotechnol. 2010 Apr;10(4):2292-8. doi: 10.1166/jnn.2010.1914.

Abstract

A novel Si nanocrystals embedded SiO2 thin film has been fabricated by the synthesis of Si-SiO2 core-shell (Si@SiO2) nanoparticles via the surface SiO2 coating of Si nanocrystals and the followed drop-coating on a silicon wafer. The resultant Si@SiO2 nanoparticles had a mean diameter of 30.43 +/- 2.63 nm and a mean shell thickness of 13.16 nm. They exhibited a stronger peak around 360 nm and a weaker green-yellow emission around 530 nm. The 360 nm peak could be attributed to the electron-hole recombination in the Si cores and that via the oxide-related defects originally present on the surface of oxide-passivated Si cores, while the green-yellow emission might be attributed to the transfer of the electron-hole pairs generated in the Si cores across the core-shell interface and the followed recombination in the SiO2 shells. The resultant Si@SiO2 nanoparticle thin film had a mean grain size of about 100 nm. It showed not only blue emission and green-yellow emission but also red emission which might be due to the transfer of the electron-hole pairs generated in the Si cores across the core-shell interface and the followed recombination via the Si==O double bonds at the particle surface. Because blue emission was significant relatively, both the Si@SiO2 nanoparticles and Si@SiO2 nanoparticle thin film still exhibited bright blue fluorescence under UV excitation. In addition, by investigating the temperature dependence of photoluminescence in the temperature range of 77 to 297 K, the nature of photoluminescence from the Si@SiO2 nanoparticle thin film was also clarified.

摘要

通过对硅纳米晶体进行表面二氧化硅包覆,然后将其滴涂在硅片上,合成了硅 - 二氧化硅核壳(Si@SiO2)纳米颗粒,从而制备出一种新型的嵌入二氧化硅薄膜的硅纳米晶体。所得的Si@SiO2纳米颗粒平均直径为30.43±2.63 nm,平均壳层厚度为13.16 nm。它们在360 nm左右表现出较强的峰,在530 nm左右表现出较弱的绿黄色发射。360 nm的峰可归因于硅核中的电子 - 空穴复合以及通过原本存在于氧化物钝化硅核表面的与氧化物相关的缺陷的复合,而绿黄色发射可能归因于硅核中产生的电子 - 空穴对穿过核壳界面的转移以及随后在二氧化硅壳层中的复合。所得的Si@SiO2纳米颗粒薄膜平均晶粒尺寸约为100 nm。它不仅表现出蓝色发射和绿黄色发射,还表现出红色发射,这可能是由于硅核中产生的电子 - 空穴对穿过核壳界面的转移以及随后通过颗粒表面的Si==O双键的复合。由于蓝色发射相对显著,Si@SiO2纳米颗粒和Si@SiO2纳米颗粒薄膜在紫外激发下仍表现出明亮的蓝色荧光。此外,通过研究77至297 K温度范围内光致发光的温度依赖性,也阐明了Si@SiO2纳米颗粒薄膜光致发光的性质。

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