表面钝化对介电泳制备的多通道氧化锌纳米线场效应晶体管（FETs）的影响。

Effect of surface passivation on dielectrophoresis-prepared multi-channel ZnO nanowire field effect transistor (FETs).

作者信息

Hyung Jung-Hwan, Kim Dong-Joo, Lee Seung-Yong, Lee Sang-Kwon

机构信息

Department of Semiconductor Science and Technology, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju 561-756, Korea.

出版信息

J Nanosci Nanotechnol. 2010 May;10(5):3497-501. doi: 10.1166/jnn.2010.2265.

DOI:10.1166/jnn.2010.2265

PMID:20358986

Abstract

We report on the effect of surface passivation on the electrical characteristics of multi-channel ZnO nanowire field-effect transistors (FETs). Surface passivation was performed using a SiO2 layer on ZnO nanowires. Multi-channel FETs were prepared by assembling as synthesized ZnO nanowires on a SiO2/Si substrate using an alternating current (AC) dielectrophoresis (DEP) technique. We observed that surface passivation with a SiO2 layer on ZnO nanowires was significantly affected by electrical characteristics of multi-channel ZnO nanowire FETs such as the threshold voltage and transconductance.

摘要

我们报道了表面钝化对多通道氧化锌纳米线场效应晶体管（FET）电学特性的影响。使用二氧化硅层对氧化锌纳米线进行表面钝化。通过采用交流电（AC）介电电泳（DEP）技术，将合成的氧化锌纳米线组装在二氧化硅/硅衬底上制备多通道FET。我们观察到，氧化锌纳米线上的二氧化硅层表面钝化对多通道氧化锌纳米线FET的电学特性，如阈值电压和跨导，有显著影响。