Shim Jae Yeob, Baek Kyu-Ha, Park Kun-Sik, Shin Hong-Sik, No Kwang-Soo, Lee Kijun, Do Lee-Mi
Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea.
J Nanosci Nanotechnol. 2010 May;10(5):3628-30. doi: 10.1166/jnn.2010.2278.
The sub-50 nm templates are successfully fabricated using hydrogen silsesquioxane (HSQ) and silicon nitride on silicon substrate. The HSQ template is directly patterned by e-beam direct writing. The cured HSQ pattern is used for the template of nanoimprint process. The silicon nitride template is reactively ion etched by ZEP resist mask pattern which is prepared by e-beam direct writing using ZEP resist. The line widths of HSQ templates and ZEP patterns after developments are between 22-30 nm and 24-30 nm, respectively. The line width of silicon nitride templates without performing descum is same as that of the ZEP pattern but shows a rough surface. When plasma descum was performed before RIE, the line width of silicon nitride templates increased from 27 nm to 35 nm and has a clean surface. The HSQ template fabrication results in this study will be promise for sub-nm imprint process.
使用氢倍半硅氧烷（HSQ）和氮化硅在硅衬底上成功制备了小于50纳米的模板。HSQ模板通过电子束直接写入进行直接图案化。固化后的HSQ图案用作纳米压印工艺的模板。氮化硅模板通过使用ZEP抗蚀剂通过电子束直接写入制备的ZEP抗蚀剂掩模图案进行反应离子蚀刻。显影后HSQ模板和ZEP图案的线宽分别在22 - 30纳米和24 - 30纳米之间。未进行去胶处理的氮化硅模板的线宽与ZEP图案相同，但表面粗糙。当在反应离子蚀刻之前进行等离子体去胶时，氮化硅模板的线宽从27纳米增加到35纳米，并且表面干净。本研究中HSQ模板的制备结果对于亚纳米压印工艺具有前景。
