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采用亚 10nm 间隔的直接且可靠的等离子体纳米结构图案化。

Direct and reliable patterning of plasmonic nanostructures with sub-10-nm gaps.

机构信息

Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, 117602 Singapore.

出版信息

ACS Nano. 2011 Sep 27;5(9):7593-600. doi: 10.1021/nn2025868. Epub 2011 Aug 22.

Abstract

Nanoscale gaps in metal films enable strong field enhancements in plasmonic structures. However, the reliable fabrication of ultrasmall gaps (<10 nm) for real applications is still challenging. In this work, we report a method to directly and reliably fabricate sub-10-nm gaps in plasmonic structures without restrictions on pattern design. This method is based on a lift-off process using high-resolution electron-beam lithography with a negative-tone hydrogen silsesquioxane (HSQ) resist, where the resulting nanogap size is determined by the width of the patterned HSQ structure, which could be written at less than 10 nm. With this method, we fabricated densely packed gold nanostructures of varying geometries separated by ultrasmall gaps. By controlling structure sizes during lithography with nanometer precision, the plasmon resonances of the resulting patterns could be accurately tuned. Optical and surface-enhanced Raman scattering (SERS) measurements on the patterned structures show that this technique has promising applications in the fabrication of passively tunable plasmonic nanostructures with ultrasmall gaps.

摘要

金属薄膜中的纳米级间隙可在等离子体结构中实现强场增强。然而,对于实际应用来说,可靠地制造小于 10nm 的超小间隙仍然具有挑战性。在这项工作中,我们报告了一种无需受图案设计限制即可直接可靠地在等离子体结构中制造小于 10nm 间隙的方法。该方法基于使用具有负性氢倍半硅氧烷(HSQ)抗蚀剂的高分辨率电子束光刻的剥离工艺,其中纳米间隙的大小由图案化 HSQ 结构的宽度决定,该宽度可小于 10nm 进行写入。通过这种方法,我们制造了由超小间隙分隔的不同几何形状的密集排列的金纳米结构。通过在光刻过程中以纳米级精度控制结构尺寸,可以精确调整所得图案的等离子体共振。对图案化结构的光学和表面增强拉曼散射(SERS)测量表明,该技术在制造具有超小间隙的被动可调谐等离子体纳米结构方面具有广阔的应用前景。

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