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光激发的 InGaAs/GaAs 量子点中声子对激子 Rabi 旋转的阻尼。

Damping of exciton Rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots.

机构信息

Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom.

出版信息

Phys Rev Lett. 2010 Jan 8;104(1):017402. doi: 10.1103/PhysRevLett.104.017402.

DOI:10.1103/PhysRevLett.104.017402
PMID:20366392
Abstract

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

摘要

我们报告了实验证据,证明声子是导致量子点激子拉比旋转强度阻尼的激发诱导退相(EID)的主要来源。EID 的速率是从基态激子跃迁的温度相关拉比旋转测量中提取的,并且与声子模型非常吻合。

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