InP/CdSe 和 CdSe/InP 核/壳量子点中带隙错配的影响。
The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots.
机构信息
Department of Molecular Science and Technology, Ajou University, Suwon 443-749, Republic of Korea.
出版信息
J Colloid Interface Sci. 2010 Jun 15;346(2):347-51. doi: 10.1016/j.jcis.2010.03.030. Epub 2010 Mar 19.
New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell.
新型 II 型 CdSe/InP 和 InP/CdSe 核壳纳米晶体结构具有交错带隙排列，已被制备出来。使用一个简单的模型来描述 InP/CdSe 和 CdSe/InP 核壳纳米晶体中的电子和空穴的波函数表明，电子和空穴的波函数分别扩展到了壳层中。InP/CdSe 和 CdSe/InP 核壳量子点的概率密度也表现出类似的趋势。结果，该结构表现出电子和空穴的离域增加，导致吸收和发射红移。InP/CdSe 的量子产率增加，而 CdSe/InP 的量子产率则降低。原因可能是由于 InP 壳层中的表面陷阱和高脱陷阱活化能。
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