Zheng Xuezhe, Shubin Ivan, Li Guoliang, Pinguet Thierry, Mekis Attila, Yao Jin, Thacker Hiren, Luo Ying, Costa Joey, Raj Kannan, Cunningham John E, Krishnamoorthy Ashok V
Sun Microsystems Physical Sciences Center, San Diego, CA 92121, USA.
Opt Express. 2010 Mar 1;18(5):5151-60. doi: 10.1364/OE.18.005151.
We report the first compact silicon CMOS 1x4 tunable multiplexer/ demultiplexer using cascaded silicon photonic ring-resonator based add/drop filters with a radius of 12 microm, and integrated doped-resistor thermal tuners. We measured an insertion loss of less than 1 dB, a channel isolation of better than 16 dB for a channel spacing of 200 GHz, and a uniform 3 dB pass band larger than 0.4 nm across all four channels. We demonstrated accurate channel alignment to WDM ITU grid wavelengths using integrated silicon heaters with a tuning efficiency of 90 pm/mW. Using this device in a 10 Gbps data link, we observed a low power penalty of 0.6 dB.
我们报道了首个紧凑型硅CMOS 1×4可调谐复用器/解复用器,它采用了基于半径为12微米的级联硅光子环形谐振器的上下路滤波器以及集成的掺杂电阻热调谐器。我们测得插入损耗小于1 dB,对于200 GHz的信道间距,信道隔离度优于16 dB,并且在所有四个信道上的均匀3 dB通带大于0.4 nm。我们利用调谐效率为90 pm/mW的集成硅加热器,展示了与WDM ITU网格波长的精确信道对准。在10 Gbps数据链路中使用该器件时,我们观察到低至0.6 dB的功率代价。