Cunningham John E, Shubin Ivan, Zheng Xuezhe, Pinguet Thierry, Mekis Attila, Luo Ying, Thacker Hiren, Li Guoliang, Yao Jin, Raj Kannan, Krishnamoorthy Ashok V
Oracle, 9515 Town Centre Drive, San Diego, CA 92121, USA.
Opt Express. 2010 Aug 30;18(18):19055-63. doi: 10.1364/OE.18.019055.
We demonstrate spectral tunability for microphotonic add-drop filters manufactured as ring resonators in a commercial 130 nm SOI CMOS technology. The filters are provisioned with integrated heaters built in CMOS for thermal tuning. Their thermal impedance has been dramatically increased by the selective removal of the SOI handler substrate under the device footprint using a bulk silicon micromachining process. An overall ~20x increase in the tuning efficiency has been demonstrated with a 100 µm radius ring as compared to a pre-micromachined device. A total of 3.9 mW of applied tuning power shifts the filter resonant peak across one free spectral node of the device. The Q-factor of the resonator remains unchanged after the co-integration process and hence this device geometry proves to be fully CMOS compatible. Additionally, after the cointegration process our result of 2π shift with 3.9 mW power is among the best tuning performances for this class of devices. Finally, we examine scaling the tuning efficiency versus device footprint to develop a different performance criterion for an easier comparison to evaluate thermal tuning. Our criterion is defined as the unit of power to shift the device resonance by a full 2π phase shift.
我们展示了采用商用130nm SOI CMOS技术制造的作为环形谐振器的微光光子分插复用滤波器的光谱可调性。这些滤波器配备了内置在CMOS中的集成加热器用于热调谐。通过使用体硅微加工工艺在器件覆盖区域下方选择性去除SOI衬底处理层,其热阻显著增加。与预微加工器件相比,对于半径为100μm的环形,调谐效率总体提高了约20倍。施加3.9mW的调谐功率可使滤波器谐振峰在器件的一个自由光谱节点上移动。在共集成工艺之后,谐振器的品质因数保持不变,因此这种器件结构被证明与CMOS完全兼容。此外,在共集成工艺之后,我们在3.9mW功率下实现2π偏移的结果是这类器件中最佳的调谐性能之一。最后,我们研究调谐效率与器件尺寸的比例关系,以开发一种不同的性能标准,以便更轻松地比较来评估热调谐。我们的标准定义为使器件谐振产生完整2π相移所需的功率单位。