Nguyen Thach G, Tummidi Ravi S, Koch Thomas L, Mitchell Arnan
School of Electrical and Computer Engineering, RMIT University GPO Box 2476, Melbourne, VIC 3001, Australia.
Opt Express. 2010 Mar 29;18(7):7243-52. doi: 10.1364/OE.18.007243.
We present the first prediction of lateral leakage behavior of the TM-like mode in thin-ridge SOI curved waveguides and ring resonators. A simple phenomenological model is first presented which predicts that the lateral leakage in these structures is significantly impacted by both the ring radius and waveguide width. This prediction is verified using full vectorial mode matching and finite element methods. We show that specific combinations of waveguide width and ring radius can lead to very low-loss propagation in the TM-like mode. This finding is critical for the design of high-Q resonators on such waveguide platforms and will have major impact on the field of silicon lasers and sensing applications.
我们首次对薄脊硅绝缘体上硅（SOI）弯曲波导和环形谐振器中类横磁（TM）模式的横向泄漏行为进行了预测。首先提出了一个简单的唯象模型，该模型预测这些结构中的横向泄漏会受到环半径和波导宽度的显著影响。使用全矢量模式匹配和有限元方法验证了这一预测。我们表明，波导宽度和环半径的特定组合可导致类TM模式下的低损耗传播。这一发现对于在此类波导平台上设计高品质因数（Q）谐振器至关重要，并且将对硅激光器和传感应用领域产生重大影响。
