Department of Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA.
ACS Nano. 2010 May 25;4(5):2811-21. doi: 10.1021/nn100084h.
We quantitatively characterized oxygen reduction kinetics at the nanoscale Ptmid R:CsHSO(4) interface at approximately 150 degrees C in humidified air using conducting atomic force microscopy (AFM) in conjunction with AC impedance spectroscopy and cyclic voltammetry. From the impedance measurements, oxygen reduction at Ptmid R:CsHSO(4) was found to comprise two processes, one displaying an exponential dependence on overpotential and the other only weakly dependent on overpotential. Both interfacial processes displayed near-ideal capacitive behavior, indicating a minimal distribution in the associated relaxation time. Such a feature is taken to be characteristic of a nanoscale interface in which spatial averaging effects are absent and, furthermore, allows for the rigorous separation of multiple processes that would otherwise be convoluted in measurements using conventional macroscale electrode geometries. The complete current-voltage characteristics of the Ptmid R:CsHSO(4) interface were measured at various points across the electrolyte surface and reveal a variation of the oxygen reduction kinetics with position. The overpotential-activated process, which dominates at voltages below -1 V, was interpreted as a charge-transfer reaction. Analysis of six different sets of Ptmid R:CsHSO(4) experiments, within the Butler-Volmer framework, yielded exchange coefficients (alpha) for charge transfer ranging from 0.1 to 0.6 and exchange currents (i(0)) spanning 5 orders of magnitude. The observed counter-correlation between the exchange current and exchange coefficient indicates that the extent to which the activation barrier decreases under bias (as reflected in the value of alpha) depends on the initial magnitude of that barrier under open circuit conditions (as reflected in the value of i(0)). The clear correlation across six independent sets of measurements further indicates the suitability of conducting AFM approaches for careful and comprehensive study of electrochemical reactions at electrolyte-metal-gas boundaries.
我们在 150°C 左右的湿度空气中使用导电原子力显微镜(AFM)结合交流阻抗谱和循环伏安法,定量研究了纳米尺度 Ptmid R:CsHSO(4) 界面处的氧还原动力学。从阻抗测量结果来看,Ptmid R:CsHSO(4) 上的氧还原反应由两个过程组成,其中一个过程对过电势呈指数依赖性,另一个过程仅对过电势弱依赖性。这两个界面过程都表现出近乎理想的电容行为,表明相关弛豫时间的分布很小。这种特征被认为是纳米尺度界面的特征,其中不存在空间平均效应,此外,还允许对多个过程进行严格分离,否则这些过程在使用传统宏观电极几何形状的测量中会混叠。在电解质表面的不同位置测量了 Ptmid R:CsHSO(4) 界面的完整电流-电压特性,结果表明氧还原动力学随位置而变化。在低于-1 V 的电压下占主导地位的过电势激活过程被解释为电荷转移反应。在 Butler-Volmer 框架内对六组不同的 Ptmid R:CsHSO(4) 实验进行分析,得到的电荷转移交换系数(alpha)范围为 0.1 到 0.6,交换电流(i(0))跨越 5 个数量级。观察到的交换电流和交换系数之间的反相关表明,偏压下激活势垒降低的程度(反映在 alpha 的值中)取决于开路条件下该势垒的初始幅度(反映在 i(0)的值中)。六个独立实验集之间的明显相关性进一步表明,导电 AFM 方法适用于仔细全面地研究电解质-金属-气体界面处的电化学反应。