Laboratoire d'Etude des Materiaux et des Composants pour l'Electronique at the Université du Littoral-Côte d'Opale, Calais-62228, France.
IEEE Trans Ultrason Ferroelectr Freq Control. 2010 May;57(5):1029-33. doi: 10.1109/TUFFC.2010.1514.
BST thin films with various dopants were grown by the sol-gel method on platinized silicon and MgO substrates. Their dielectric properties were investigated at low frequency (up to 1 MHz) on silicon with parallel-plate capacitors and at high frequency (up to 15 GHz) with interdigitated capacitors on MgO substrate. The results depend on the nature of the dopant and show that Mg is a very good candidate to reduce dielectric losses. On the other hand, K is a good candidate as dopant of BST thin film to drastically increase the tunability.
采用溶胶-凝胶法在镀铂硅和氧化镁衬底上生长了各种掺杂的 BST 薄膜。在硅衬底上用平行板电容器在低频（高达 1 MHz）和在氧化镁衬底上用叉指电容器在高频（高达 15 GHz）下研究了它们的介电性能。结果取决于掺杂剂的性质，并表明 Mg 是降低介电损耗的非常好的候选者。另一方面，K 是作为 BST 薄膜掺杂剂来显著提高调谐性的良好候选者。
