使用液体 GeCl4 作为前驱体生长锗纳米线：Si 杂质的关键作用。
Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities.
机构信息
Department of Chemistry and Graduate Institute of Advanced Materials Science, Pohang University of Science and Technology, San 31, Hyoja-Dong, Nam-Gu, Pohang, 790-784, Korea.
出版信息
Chem Commun (Camb). 2009 Sep 14(34):5124-6. doi: 10.1039/b908361h. Epub 2009 Jul 17.
DOI:10.1039/b908361h
PMID:20448967
Abstract
Liquid GeCl(4) precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor-liquid-solid (VLS) process, in which Si, supplied as a form of liquid SiCl(4), plays a critical role for the successful formation of Ge NWs.
摘要
液体 GeCl(4)前体通过汽液固（VLS）工艺被用来生长一维 Ge 纳米线（NWs），其中 Si 以液体 SiCl(4)的形式提供，对于 Ge NWs 的成功形成起着关键作用。
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