Al-Salman R, Mallet J, Molinari M, Fricoteaux P, Martineau F, Troyon M, Zein El Abedin S, Endres F
Institute of Particle Technology, Chair of Interface Processes, Clausthal University of Technology, Clausthal-Zellerfeld, Germany.
Phys Chem Chem Phys. 2008 Nov 7;10(41):6233-7. doi: 10.1039/b809075k. Epub 2008 Sep 5.
In this paper we report for the first time on the room temperature template synthesis of germanium and silicon nanowires by potentiostatic electrochemical deposition from the air- and water stable ionic liquid 1-butyl-1-methylpyrrolidinium bis(trifluoromethylsulfonyl)amide ([Py(1,4)]Tf(2)N) containing GeCl(4) and SiCl(4) as a Ge and Si source, respectively. Commercially-available track-etched polycarbonate membranes (PC) with an average nominal pore diameter of 90-400 nm were used as templates. Ge and Si nanowires with an average diameter corresponding to the nanopores' diameter and lengths of a few micrometres were reproducibly obtained. Structural characterization of the nanowires was performed by EDX, TEM, HR-SEM and Raman spectroscopy. Despite the rough surface of the nanowires, governed mostly by the original shape of the nanopore's wall of the commercially-available PC membrane, preliminary structural characterizations demonstrate the promising prospective of this innovative elaboration process compared to constraining high vacuum and high temperature methods.
在本文中，我们首次报道了通过恒电位电化学沉积法，以空气和水稳定的离子液体1-丁基-1-甲基吡咯烷鎓双（三氟甲基磺酰）亚胺（[Py(1,4)]Tf₂N）为电解液，分别以GeCl₄和SiCl₄作为Ge和Si源，在室温下模板合成锗和硅纳米线。使用平均标称孔径为90 - 400 nm的商用径迹蚀刻聚碳酸酯膜（PC）作为模板。可重复获得平均直径与纳米孔直径相对应且长度为几微米的Ge和Si纳米线。通过能谱仪（EDX）、透射电子显微镜（TEM）、高分辨率扫描电子显微镜（HR-SEM）和拉曼光谱对纳米线进行了结构表征。尽管纳米线表面粗糙，这主要由商用PC膜纳米孔壁的原始形状决定，但初步结构表征表明，与受限的高真空和高温方法相比这种创新的制备工艺具有广阔前景。
