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Automated characterization of bending and expansion of a lattice of a Si substrate near a SiGe/Si interface by using split HOLZ line patterns.

作者信息

Saitoh Koh, Yasuda Yoshifumi, Hamabe Maiko, Tanaka Nobuo

机构信息

EcoTopia Science Institute, Nagoya University, Nagoya, Japan.

出版信息

J Electron Microsc (Tokyo). 2010;59(5):367-78. doi: 10.1093/jmicro/dfq016. Epub 2010 May 19.

DOI:10.1093/jmicro/dfq016
PMID:20484750
Abstract

A method to determine lattice parameters and parameters characterizing the bending strain of the lattice, the direction and magnitude of the displacement field of the bending strain, by using higher-order Laue zone (HOLZ) reflection lines observed in convergent-beam electron diffraction patterns is proposed. In this method, all of the parameters are simultaneously determined by a fit of two Hough transforms of experimental and kinematically simulated HOLZ line patterns. This method has been used to obtain two-dimensional maps of lattice parameter a, the direction and relative magnitude of the displacement field in a Si substrate near a SiGe/Si interface.

摘要

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