Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.
J Am Chem Soc. 2010 Jun 23;132(24):8440-52. doi: 10.1021/ja1018783.
The synthesis, structural, electrochemical, and thin film electrical and electronic structural properties of a series of arylene diimide-oligothiophene n-type semiconductors are reported. This family of compounds allows analysis of the effects on thin film transistor performance of the following: (i) oligothiophene backbone catenation; (ii) naphthalenediimide vs perylenediimide core interchange; (iii) phenylene group introduction in the oligothiophene backbone. Electrochemical experiments indicate similar redox energetics for all members of this series, while thin film transistor measurements reveal markedly different charge transport performances. The highest electron mobility of 0.35 cm(2) V(-1) s(-1) is recorded for films of benzo[lmn]thieno[3',4':4,5]imidazo[2,1-b][3,8]phenanthroline-1,3,6(2H)-trione, 2-octyl (NDI-1T). Solution-processed field effect transistors were also fabricated and surprisingly exhibit electrical performances surpassing that of the vapor-deposited films in the case of isoquino[6',5',4':10,5,6]anthra[2,1,9-def]thieno[3',4':4,5]imidazo[2,1-a]isoquinoline-1,3,8(2H)-trione, 2-(1-heptyloctyl)-10,12-di-2-thienyl (PDI-3T).
报道了一系列亚芳基二酰亚胺-寡噻吩 n 型半导体的合成、结构、电化学及薄膜电-电子结构性能。该类化合物可分析如下因素对薄膜晶体管性能的影响：（i）寡噻吩主链连接；（ii）萘二酰亚胺与苝二酰亚胺核心的交换；（iii）在寡噻吩主链中引入亚苯基。电化学实验表明该系列所有成员均具有相似的氧化还原能，而薄膜晶体管测量则揭示出明显不同的电荷输运性能。具有苯并[lmn]噻吩并[3',4':4,5]咪唑并[2,1-b][3,8]菲咯啉-1,3,6(2H)-三酮，2-辛基（NDI-1T）的电子迁移率最高可达 0.35 cm(2) V(-1) s(-1)。还制备了溶液处理的场效应晶体管，出人意料的是，在异喹啉并[6',5',4':10,5,6]蒽并[2,1,9-def]噻吩并[3',4':4,5]咪唑并[2,1-a]异喹啉-1,3,8(2H)-三酮，2-(1-辛基)-10,12-二-2-噻吩基（PDI-3T）的情况下，其电性能超过了气相沉积薄膜。
