Sopori B L
Appl Opt. 1988 Nov 15;27(22):4676-83. doi: 10.1364/AO.27.004676.
Optical scattering from a defect-etched semiconductor sample is used to characterize dislocations in the material. It is shown that when the sample is illuminated normally with a He-Ne (lambda = 6328-A) laser beam the reflection pattern can be used to identify the shapes of the etch pits and hence the directions of the dislocation propagation. The integrated light flux scattered by the illuminated sample, normalized by the incident flux, is shown to be proportional to the dislocation density. This principle is applied in two ways to count dislocations at the sample surface. In one case the defect-etched sample is scanned under a light beam, and the scattered flux is collected by an integrating sphere and measured. In the second case the defect-etched sample is illuminated with incoherent light of a broad angular spectrum, and a photographic transparency is produced which registers an image of the dislocation density distribution of the original sample. These two methods for counting dislocations, mapping dislocation distribution, and measuring average dislocation density of the sample are discussed.
利用从缺陷蚀刻半导体样品产生的光散射来表征材料中的位错。结果表明，当用氦氖（λ = 6328埃）激光束垂直照射样品时，反射图案可用于识别蚀刻坑的形状，从而确定位错传播的方向。被照射样品散射的积分光通量，以入射通量归一化后，显示与位错密度成正比。这一原理以两种方式应用于计算样品表面的位错。一种情况是，在光束下扫描缺陷蚀刻样品，散射通量由积分球收集并测量。另一种情况是，用宽角谱的非相干光照射缺陷蚀刻样品，并制作一张照相透明片，它记录了原始样品位错密度分布的图像。讨论了这两种计算位错、绘制位错分布图以及测量样品平均位错密度的方法。
