Itakura Masaru, Kuwano Noriyuki, Sato Kaoru, Tachibana Shigeaki
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka, Japan.
J Electron Microsc (Tokyo). 2010 Aug;59 Suppl 1:S165-73. doi: 10.1093/jmicro/dfq044. Epub 2010 Jun 16.
Image contrasts of Si-based semiconducting materials have been investigated by using the latest scanning electron microscope with various detectors under a range of experimental conditions. Under a very low accelerating voltage (500 V), we obtained a good image contrast between crystalline SiGe whiskers and the amorphous matrix using an in-lens secondary electron (SE) detector, while the conventional topographic SE image and the compositional backscattered electron (BSE) image gave no distinct contrast. By using an angular-selective BSE (AsB) detector for wide-angle scattered BSE, on the other hand, the crystal grains in amorphous matrix can be clearly visualized as 'channelling contrast'. The image contrast is very similar to that of their transmission electron microscope image. The in-lens SE (true SE falling dots SE1) and the AsB (channelling) contrasts are quite useful to distinguish crystalline parts from amorphous ones.
通过在一系列实验条件下使用配备各种探测器的最新扫描电子显微镜，对硅基半导体材料的图像对比度进行了研究。在非常低的加速电压（500V）下，使用透镜内二次电子（SE）探测器，我们在晶体硅锗晶须和非晶基体之间获得了良好的图像对比度，而传统的形貌SE图像和成分背散射电子（BSE）图像则没有明显的对比度。另一方面，通过使用用于广角散射BSE的角选择性BSE（AsB）探测器，非晶基体中的晶粒可以清晰地显示为“沟道对比度”。该图像对比度与它们的透射电子显微镜图像非常相似。透镜内SE（真正的SE落点SE1）和AsB（沟道）对比度对于区分晶体部分和非晶部分非常有用。
