Peters K R
Scan Electron Microsc. 1982(Pt 4):1359-72.
High quality of secondary electron (SE) images, taken at useful magnifications of 100,000 to 200,000, require new signal generation and collection methods and new metal coating procedures. High quality is defined as the condition under which image contrast describes accurately the topographic features of the specimen in a size range that approximates the beam diameter. Such high resolution contrasts are produced by the SE (SE-I) generated by a small electron probe on the specimen surface. Tobacco mosiac virus and ferritin molecules deposited on bulk substrates were introduced as test specimens to check the image quality obtained. The SE-I signal contrast could be imaged when SE (SE-III), produced by backscattered electrons (BSE) at the pole piece of the final lens, were eliminated with an electron absorption device attached to the pole piece. This signal collection procedure will be referred to as "Secondary Electron-I Image" (SE-I image) mode. In addition to the SE-III, BSE generate SE-II in the specimen itself. On specimens deposited on bulk gold or platinum, and coated with the same metals SE-II produced a microroughness contrast that limited particle resolution in the SE-I image mode to approximately 10 nm. Reduction of SE-II and enrichment of the signal in SE-I was achieved by using continuous fine crystalline coatings of tantalum, niobium and chromium. By applying these metals in films of approximately 2.0 nm thickness, the SE-I contrast generation was found to be indepedent of the atomic number of the metal. Edge sharpness was improved when the specimens were coated with low atomic number metals. Under these conditions, the quality of images obtained in SE-I image mode equals that of images obtained in TEM from identically coated specimens and was limited only by the size of the topographic details, beam diameter and beam current.
高质量的二次电子(SE)图像,在100,000至200,000的有效放大倍数下拍摄,需要新的信号产生和收集方法以及新的金属镀膜程序。高质量被定义为图像对比度能够准确描述标本在接近电子束直径的尺寸范围内的形貌特征的条件。这种高分辨率对比度是由标本表面的小电子探针产生的二次电子(SE-I)产生的。将沉积在块状衬底上的烟草花叶病毒和铁蛋白分子作为测试标本引入,以检查获得的图像质量。当用附着在极靴上的电子吸收装置消除最终透镜极靴处的背散射电子(BSE)产生的二次电子(SE-III)时,可以对SE-I信号对比度进行成像。这种信号收集程序将被称为“二次电子-I图像”(SE-I图像)模式。除了SE-III,BSE在标本本身中产生SE-II。在沉积在块状金或铂上并涂覆相同金属的标本上,SE-II产生了微观粗糙度对比度,将SE-I图像模式下的颗粒分辨率限制在约10 nm。通过使用钽、铌和铬的连续细晶涂层实现了SE-II的减少和SE-I中信号的富集。通过应用厚度约为2.0 nm的这些金属薄膜,发现SE-I对比度的产生与金属的原子序数无关。当标本用低原子序数金属涂覆时,边缘清晰度得到改善。在这些条件下,SE-I图像模式下获得的图像质量与相同涂覆标本在透射电子显微镜(TEM)中获得的图像质量相当,并且仅受形貌细节尺寸、电子束直径和电子束电流的限制。