Wei F, Li Y Z, Ran G Z, Qin G G
State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, People's Republic of China.
Opt Express. 2010 Jun 21;18(13):13542-6. doi: 10.1364/OE.18.013542.
1.54 microm Si-anode organic light emitting devices with Er(DBM)(3)phen: Bphen and Bphen/Bphen:Cs(2)CO(3) as the emissive and electron transport layers (the devices are referred to as the Bphen-based devices) have been investigated. In comparison with the AlQ-based devices with the same structure but with AlQ:Er(DBM)(3)Phen and AlQ as the emissive and electron transport layers, the maximum EL intensity and maximum power efficiency from the Bphen-based devices increase by a factor of 3 and 2.2, respectively. The optimized p-Si anode resistivity of the Bphen-based device of 10 Omega.cm is significantly lower than that of the AlQ-based device. The NIR EL improvement can be attributed to the energy transfer from Bphen to the Er complex and equilibrium of electron injection from the Sm/Au cathode and hole injection from the p-Si anode at a higher level.
已对以Er(DBM)₃phen:Bphen和Bphen/Bphen:Cs₂CO₃作为发光层和电子传输层的1.54微米硅阳极有机发光器件（这些器件称为基于Bphen的器件）进行了研究。与具有相同结构但以AlQ:Er(DBM)₃Phen和AlQ作为发光层和电子传输层的基于AlQ的器件相比，基于Bphen的器件的最大电致发光强度和最大功率效率分别提高了3倍和2.2倍。基于Bphen的器件优化后的p - Si阳极电阻率为10Ω·cm，明显低于基于AlQ的器件。近红外电致发光的改善可归因于从Bphen到铒配合物的能量转移以及在更高水平上从Sm/Au阴极的电子注入和从p - Si阳极的空穴注入的平衡。
