Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, 24143, Kiel, Germany.
Nanoscale Res Lett. 2010 May 14;5(7):1190-4. doi: 10.1007/s11671-010-9624-z.
The growth mechanism of currentline-oriented pores in n-type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ during pore etching and by theoretical calculations. Several pore growth parameters could thus be extracted in situ that are otherwise not obtainable. These include the space-charge-region (SCR) width, the SCR potential, the capacitance at the pore tips, and the avalanche breakdown field strength. It could be demonstrated that the system adjusts itself in such a way that the potential across the space-charge-region at the pore tips is kept constant within a certain bandwidth of the applied potential. This provides for a constant field strength at the pore tips, ensuring that avalanche breakdown occurs, generating the necessary holes for the electrochemical dissolution of InP.
通过在原位进行的快速傅里叶变换阻抗谱（FFT IS）和理论计算，研究了 n 型 InP 中电流线导向孔的生长机制。因此，可以提取出一些原位情况下无法获得的孔生长参数。这些参数包括空间电荷区（SCR）宽度、SCR 电势、孔尖端的电容和雪崩击穿场强。可以证明，该系统会进行自我调整，使得孔尖端的空间电荷区的电势在施加电势的一定带宽内保持恒定。这为孔尖端提供了恒定的场强，确保了雪崩击穿的发生，产生了电化学溶解 InP 所需的空穴。
