Gerngross Mark-Daniel, Carstensen Jürgen, Föll Helmut
Institute for Materials Science, Christian-Albrechts-University of Kiel, Kaiserstrasse 2, Germany.
Nanoscale Res Lett. 2012 Jul 9;7(1):379. doi: 10.1186/1556-276X-7-379.
: A process chain for a magnetoelectric device based on porous InP will be presented using only chemical, electrochemical, photoelectrochemical, photochemical treatments and the galvanic deposition of metals in high-aspect-ratio structures. All relevant process steps starting with the formation of a self-ordered array of current-line oriented pores followed by the membrane fabrication and a post-etching step, as well as the galvanic metal filling of membrane structures are presented and discussed. The resistivity of a porous InP structure could be drastically increased and, thus, the piezoelectric performance of the porous InP structure. The developed galvanic Ni filling process is capable to homogeneously fill high aspect-ratio membranes.
将介绍一种基于多孔磷化铟的磁电设备的工艺链，该工艺仅使用化学、电化学、光电化学、光化学处理以及在高纵横比结构中进行金属的电沉积。展示并讨论了所有相关工艺步骤，从形成电流线取向的自有序孔阵列开始，接着进行膜制备和蚀刻后步骤，以及膜结构的电沉积金属填充。多孔磷化铟结构的电阻率可以大幅提高，从而提高多孔磷化铟结构的压电性能。所开发的电沉积镍填充工艺能够均匀地填充高纵横比的膜。
