Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan.
Nanotechnology. 2010 Jul 23;21(29):295304. doi: 10.1088/0957-4484/21/29/295304. Epub 2010 Jul 5.
Atomically-flat surfaces are obtained after thin GaAsSb buffer layer growth on GaAs substrates with regular-distributed nano-holes formed after oxide desorption of the local atomic-force-microscopy anode oxidation. Different from the samples with GaAsSb buffer layers, increasing surface root-mean-square roughness is observed for the GaAs-buffered samples with increasing GaAs buffer layer thickness. The phenomenon is attributed to the enhanced adatom migration resulting from the incorporation of Sb atoms. By using the substrates with nano-holes after buffer layer growth, site-controlled self-assembled InAs quantum dots (QDs) are observed with the deposition of a below-critical-thickness InAs coverage of 1.3 monolayer (ML).
在 GaAs 衬底上生长薄的 GaAsSb 缓冲层后，获得原子级平坦的表面，然后通过局部原子力显微镜阳极氧化的氧化物解吸在表面形成规则分布的纳米孔。与具有 GaAsSb 缓冲层的样品不同，对于具有 GaAs 缓冲层的样品，随着 GaAs 缓冲层厚度的增加，观察到表面均方根粗糙度增加。这种现象归因于 Sb 原子的掺入导致的增强的吸附原子迁移。通过使用在缓冲层生长后具有纳米孔的衬底，在沉积低于临界厚度的 1.3 单层（ML）的 InAs 覆盖物时，观察到具有位置控制的自组装 InAs 量子点（QD）。
