Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Nanotechnology. 2010 Jul 23;21(29):295706. doi: 10.1088/0957-4484/21/29/295706. Epub 2010 Jul 5.
The memory effects of gold (Au) nanocrystal (NC) non-volatile memory structures consisting of polyvinylpyrrolidone (PVP) K-30 polymer tunneling and control layers are investigated. The trilayer structure (PV P/Au-NCs + PV P/PV P) on p-type Si substrate was fabricated by spin coating, and transmission electron microscopy study reveals that the average size of the Au-NCs formed is about 5 nm in diameter. Capacitance-voltage (C-V) measurement on the memory structure shows a counter-clockwise hysteresis loop with a significant flat band voltage shift, revealing a memory effect of the Au-NCs with a charge density of up to 1 x 10(12) cm(-2) and a flat band voltage shift of 2.0 V. A unique feature of the double loop in the C-V curves suggests double barriers during electron tunneling. The I-V hysteresis is also characterized, and a switching mechanism of resistive change is discussed.
研究了由聚维酮（PVP）K-30 聚合物隧穿和控制层组成的金（Au）纳米晶体（NC）非易失性存储结构的记忆效应。通过旋涂法在 p 型 Si 衬底上制备了三层结构（PVP/Au-NCs+PVP/PVP），透射电子显微镜研究表明，形成的 Au-NCs 的平均尺寸约为 5nm 直径。对存储结构的电容-电压（C-V）测量显示出一个逆时针滞后环，具有显著的平带电压偏移，揭示了 Au-NCs 的记忆效应，其电荷密度高达 1x10(12)cm(-2)，平带电压偏移为 2.0V。C-V 曲线中双环的一个独特特征表明电子隧穿过程中有双势垒。还对 I-V 滞后进行了特征描述，并讨论了电阻变化的开关机制。
