Wang Shiye, Liu Weili, Zhang Miao, Song Zhitang, Lin Chenglu, Dai J Y, Lee P F, Chan H L W, Choy C L
The Research Center of Semiconductor Functional Film Engineering Technology, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, PR China.
J Nanosci Nanotechnol. 2006 Jan;6(1):205-8.
A metal-insulator-semiconductor (MIS) structure containing an HfO2/SiO2 stack tunnel layer, isolated Germanium (Ge) nanocrystals, and an HfO2 capping layer, was obtained by an electron-beam evaporation method. A high-resolution transmission electron microscopy (HRTEM) study revealed that uniform and pronounced Ge nanocrystals had formed after annealing. Raman spectroscopy provided evidence for the formation of Ge-Ge bonds and the optimal annealing temperature for the crystallization ratio of the Ge. The electric properties of the MIS structure were characterized by capacitance-voltage (C-V) and current-voltage (I-V) measurements at room temperature. Negative photoconductivity was observed when the structure was under a forward bias, which screened the bias voltage, resulting in a decrease in the current at a given voltage and a negative shift in flat band voltage. A relatively high stored charge density of 3.27 x 10(12) cm 2 was also achieved.
通过电子束蒸发法制备了一种金属-绝缘体-半导体（MIS）结构，该结构包含HfO2/SiO2堆叠隧道层、孤立的锗（Ge）纳米晶体和HfO2覆盖层。高分辨率透射电子显微镜（HRTEM）研究表明，退火后形成了均匀且明显的Ge纳米晶体。拉曼光谱为Ge-Ge键的形成以及Ge结晶率的最佳退火温度提供了证据。在室温下通过电容-电压（C-V）和电流-电压（I-V）测量对MIS结构的电学性质进行了表征。当结构处于正向偏压下时观察到负光电导，这屏蔽了偏压，导致给定电压下电流减小和平带电压负移。还实现了相对较高的3.27×10(12) cm 2的存储电荷密度。
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