Department of Physics and Astronomy, The University of Western Ontario, London, ON, N6A 3K7, Canada.
Nanoscale Res Lett. 2009 Aug 2;4(11):1319-23. doi: 10.1007/s11671-009-9399-2.
This paper presents a method to control the average spacing between organometallic chemical vapor deposition (OMCVD) grown gold nanoparticles (Au NPs) in a line. Focused ion beam patterned CH3-terminated self-assembled monolayers are refilled systematically with different mixtures of SH- and CH3-terminated silanes. The average spacing between OMCVD Au NPs is demonstrated systematically to decrease by increasing the v/v% ratio of the thiols in the binary silane mixtures with SH- and CH3-terminated groups.
本文提出了一种控制有机金属化学气相沉积（OMCVD）生长的金纳米粒子（Au NPs）在直线上平均间距的方法。通过聚焦离子束图案化的 CH3 端自组装单层，系统地用不同比例的 SH 和 CH3 端硅烷混合物进行再填充。结果表明，随着 SH 和 CH3 端基团二元硅烷混合物中硫醇的 v/v%比例增加，OMCVD Au NPs 的平均间距呈系统下降趋势。
