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利用有机基磁性半导体进行自旋注入/检测。

Spin injection/detection using an organic-based magnetic semiconductor.

出版信息

Nat Mater. 2010 Aug;9(8):638-42. doi: 10.1038/nmat2797. Epub 2010 Jul 18.

DOI:10.1038/nmat2797
PMID:20639895
Abstract

The new paradigm of electronics, 'spintronics', promises to extend the functionality of information storage and processing in conventional electronics. The principal spintronics device, the 'spin valve', consists of two magnetic layers decoupled by a spin-transporting spacer, which allows parallel (on) and antiparallel (off) alignment of the magnetizations (spins) of the two magnetic layers. The device resistance then depends on the spin alignment controlled by the external magnetic field. In pursuit of semiconductor spintronics, there have been intensive efforts devoted to develop room-temperature magnetic semiconductors and also to incorporate both inorganic semiconductors and carbon-based materials as the spin-transporting channels. Molecule/organic-based magnets, which allow chemical tuning of electronic and magnetic properties, are a promising new class of magnetic materials for future spintronic applications. Here, we report the realization of an organic-based magnet as an electron spin polarizer in the standard spintronics device geometry. A thin non-magnetic organic semiconductor layer and an epitaxial ferromagnetic oxide film were employed to form a hybrid magnetic tunnel junction. The results demonstrate the spin-polarizing nature of the organic-based magnetic semiconductor, vanadium(TCNE: tetracyanoethylene)(x) (x approximately 2; T(c) approximately 400 K), and its function as a spin injector/detector in hybrid magnetic multilayer devices.

摘要

电子学的新范例“自旋电子学”有望扩展传统电子学中信息存储和处理的功能。主要的自旋电子学器件是“自旋阀”,它由两个通过自旋输运势垒隔开的磁性层组成,允许两个磁性层的磁化(自旋)平行(ON)和反平行(OFF)排列。然后,器件电阻取决于外部磁场控制的自旋排列。为了追求半导体自旋电子学,人们一直在努力开发室温磁性半导体,并将无机半导体和基于碳的材料整合为自旋输运通道。分子/有机基磁铁允许电子和磁性能的化学调谐,是未来自旋电子学应用中一类有前途的新型磁性材料。在这里,我们报告了在标准自旋电子学器件几何结构中实现有机基磁体作为电子自旋极化器。采用薄的非磁性有机半导体层和外延铁磁氧化物薄膜形成混合磁性隧道结。结果表明,有机基磁性半导体钒(TCNE:四氰乙烯)(x)(x 约为 2;T(c)约为 400 K)具有自旋极化性质,并在混合磁性多层器件中充当自旋注入/探测器。

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