Lee Hyeong Jae, Zhang Shujun, Shrout Thomas R
J Appl Phys. 2010 Jun 15;107(12):124107. doi: 10.1063/1.3437068. Epub 2010 Jun 24.
The dielectric and piezoelectric properties of Pb(Mg(13)Nb(23))O(3)-PbTiO(3) (PMN-PT) and Pb(In(12)Nb(12))O(3)-Pb(Mg(13)Nb(23))O(3)-PbTiO(3) (PIN-PMN-PT) ferroelectric single crystals were investigated as a function of thicknessscale in monolithic and piezoelectricpolymer 1-3 composites. For the case of PMN-PT single crystals, the dielectric (epsilon33Tepsilon0) and electromechanical properties (k(33)) were found to significantly decrease with decreasing thickness (500-40 mum), while minimal thickness dependency was observed for PIN-PMN-PT single crystals. Temperature dependent dielectric behavior of the crystals suggested that the observed thickness dependence in PMN-PT was strongly related to their relatively large domain size (>10-20 mum). As anticipated, 1-3 composite comprised of PIN-PMN-PT crystals exhibited superior properties to that of PMN-PT composite at high frequencies (>20 MHz). However, the observed couplings, being on the order of 80%, were disappointedly low when compared to their monolithic counterparts, the result of surface damage introduced during the dicing process, as evidenced by the broadened [002] peaks in the x-ray diffraction pattern.
研究了铅镁铌酸铅 - 钛酸铅(PMN - PT)和铅铟铌酸铅 - 铅镁铌酸铅 - 钛酸铅(PIN - PMN - PT)铁电单晶在整体式和压电聚合物1 - 3复合材料中的介电和压电性能与厚度尺度的关系。对于PMN - PT单晶,发现介电常数(ε33T/ε0)和机电性能(k33)随厚度减小(500 - 40μm)而显著降低,而PIN - PMN - PT单晶的厚度依赖性最小。晶体的温度依赖性介电行为表明,PMN - PT中观察到的厚度依赖性与其相对较大的畴尺寸(>10 - 20μm)密切相关。正如预期的那样,由PIN - PMN - PT晶体组成的1 - 3复合材料在高频(>20 MHz)下表现出优于PMN - PT复合材料的性能。然而,与整体式材料相比,观察到的耦合系数约为80%,令人失望地低,这是切割过程中引入的表面损伤的结果,X射线衍射图谱中[002]峰变宽证明了这一点。