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用于高性能压电器件的助熔剂生长PZN-PT单晶的特性研究

Characterization of flux-grown PZN-PT single crystals for high-performance piezo devices.

作者信息

Lim Leong Chew, Rajan Kotam Kalidindi, Jin Jing

机构信息

Ministry of Education, Singapore, and National University of Singapore, Singapore 119260.

出版信息

IEEE Trans Ultrason Ferroelectr Freq Control. 2007 Dec;54(12):2474-8. doi: 10.1109/TUFFC.2007.562.

Abstract

Relaxor ferroelectric Pb(Zn(1/3)Nb(2/3))O(3-x)PbTiO(3) (PZN-PT) and Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)(PMN-PT) single crystals are the potential candidates for future high-performance piezoelectric devices due to their exceptionally high dielectric and piezoelectric properties. Characterization on flux-grown PZN-PT single crystals of different orientations revealed that PZN-(6-7)%PT single crystals show good homogeneity in dielectric and electromechanical properties and composition. When poled in [001] direction, these crystals exhibit high longitudinal-mode properties with dielectric constant (K(T)) approximately equal to 7000, piezoelectric coefficients (d(33)) approximately equal to 2800 pC/N, and electromechanical coupling factors (k(33)) > or = 0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse-mode dielectric and piezoelectric properties with K(T) > or = 5000, d(32) approximately equal to -3800 pC/N and k(32) > or = 0.90. [011]- poled PZN 6%PT has d(32) approximately equal to -3000 pC/N and comparable k(32) and K(T) values. In comparison with melt-grown PMNPT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarization temperatures (TDP).

摘要

弛豫铁电体Pb(Zn(1/3)Nb(2/3))O(3 - x)PbTiO(3)(PZN - PT)和Pb(Mg(1/3)Nb(2/3))O(3)-PbTiO(3)(PMN - PT)单晶因其极高的介电和压电性能,是未来高性能压电器件的潜在候选材料。对不同取向的熔盐法生长的PZN - PT单晶进行表征发现,PZN-(6 - 7)%PT单晶在介电、机电性能和成分方面表现出良好的均匀性。当沿[001]方向极化时,这些晶体表现出高纵向模式性能,介电常数(K(T))约为7000,压电系数(d(33))约为2800 pC/N,机电耦合因子(k(33))≥0.92。对于[011]切割的晶体,最佳极化的PZN - 7%PT单晶表现出非常高的横向模式介电和压电性能,K(T)≥5000,d(32)约为 - 3800 pC/N,k(32)≥0.90。[011]极化的PZN 6%PT的d(32)约为 - 3000 pC/N,k(32)和K(T)值相当。与熔盐法生长的PMNPT单晶相比,熔盐法生长的PZN - PT单晶表现出良好的成分均匀性、优异且一致的介电和机电性能以及更高的去极化温度(TDP)。

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