NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza S Silvestro 12, 56127 Pisa, Italy.
Small. 2010 Sep 6;6(17):1935-41. doi: 10.1002/smll.201000811.
During the growth of InAs nanowires from Pd catalyst particles on InAs(111)A substrates, two distinct classes of nanowires are observed with smooth or zigzagged sidewalls. It is shown that this is related to a bimodal distribution of the wire-tip diameter: above a critical diameter wires grow with smooth sidewalls, and below with zigzagged morphology. Transmission electron microscopy analysis shows that the catalyst particles at the tip of zigzagged wires are smooth and have a higher aspect ratio than those at the tip of smooth wires. Zigzagged wires grow from liquid particles in the vapor-liquid-solid (VLS) mode whereas the smooth ones grow from solid particles in the vapor-solid-solid (VSS) mode.
在 InAs(111)A 衬底上的 Pd 催化剂颗粒生长 InAs 纳米线的过程中，观察到两种具有平滑或锯齿状侧壁的不同类型的纳米线。结果表明，这与线尖端直径的双峰分布有关：直径超过临界值时，纳米线以平滑的侧壁生长，低于该值时则以锯齿状形态生长。透射电子显微镜分析表明，锯齿形纳米线尖端的催化剂颗粒是平滑的，其纵横比高于平滑纳米线尖端的催化剂颗粒。锯齿形纳米线是通过气相-液相-固相等离子体生长模式从液体颗粒中生长而来，而平滑纳米线则是通过气相-固相等离子体生长模式从固体颗粒中生长而来。
