School of Semiconductor and Chemical Engineering, Department of BIN Technology, and Nanomaterials Processing Research Centre, Chonbuk National University, Jeonju, 561-756, South Korea.
Nanoscale Res Lett. 2009 Dec 27;5(3):669-74. doi: 10.1007/s11671-009-9504-6.
A hybrid technique for the selective growth of ZnO nanorod arrays on wanted areas of thin cover glass substrates was developed without the use of seed layer of ZnO. This method utilizes electron-beam lithography for pattern transfer on seedless substrate, followed by solution method for the bottom-up growth of ZnO nanorod arrays on the patterned substrates. The arrays of highly crystalline ZnO nanorods having diameter of 60 ± 10 nm and length of 750 ± 50 nm were selectively grown on different shape patterns and exhibited a remarkable uniformity in terms of diameter, length, and density. The room temperature cathodluminescence measurements showed a strong ultraviolet emission at 381 nm and broad visible emission at 585-610 nm were observed in the spectrum.
一种在没有使用 ZnO 种子层的情况下，在薄盖玻片基底的指定区域选择性生长 ZnO 纳米棒阵列的混合技术被开发出来。该方法利用电子束光刻在无种子基底上进行图案转移，然后通过溶液法在图案化基底上进行 ZnO 纳米棒阵列的自下而上生长。高度结晶的 ZnO 纳米棒阵列的直径为 60±10nm，长度为 750±50nm，选择性地生长在不同形状的图案上，在直径、长度和密度方面表现出显著的均匀性。室温下的阴极发光测量显示，在光谱中观察到 381nm 处的强紫外发射和 585-610nm 处的宽可见发射。
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