Research Center for Compact Chemical System, National Institute of Advanced Industrial Science and Technology (AIST), Sendai 983-8551, Japan.
J Colloid Interface Sci. 2013 Apr 1;395:64-7. doi: 10.1016/j.jcis.2012.12.031. Epub 2012 Dec 27.
Preparation and characterization of epitaxial growth of ZnO nanotip arrays are essential for field emission applications due to its high emission rate of electron and fast electron-transfer rate. At first, nanocrystalline ITO thin films were prepared on glass substrates by ion-beam sputter deposition (IBSD) method. ZnO seed layer was prepared on the ITO coated glass substrates by IBSD at room temperature, and then, ZnO nanotip arrays were epitaxially grown on the as-prepared ZnO seed layer coated ITO/Glass substrates by hydrothermal method. The surface morphology study confirmed that the ZnO nanotip array films were epitaxially grown on ITO/Glass substrates, and it clearly showed the formation of well-aligned ZnO nanotip arrays on ITO/Glass substrate. The as-prepared samples were annealed at different temperatures (100, 150 and 270°C). After annealing, the surface morphology of ZnO nanotip arrays did not show any remarkable change. X-ray diffraction pattern of ZnO nanotip array films prepared on ITO/Glass showed a main peak at 2θ=34.3°, which corresponds to (002) plane. The photoluminescence spectra showed the strong intensity of UV emission and weak intensity of green emission. The J-V characteristic of Ag/NPB/PMMA/ZnO/ITO showed good rectification behavior.
由于其具有高电子发射率和快速电子转移率，因此对于场发射应用而言，准备和表征 ZnO 纳米尖阵列的外延生长至关重要。
首先，通过离子束溅射沉积（IBSD）方法在玻璃衬底上制备纳米晶 ITO 薄膜。通过 IBSD 在室温下在涂覆 ITO 的玻璃衬底上制备 ZnO 种子层，然后通过水热法在制备的 ZnO 种子层涂覆的 ITO/Glass 衬底上外延生长 ZnO 纳米尖阵列。
表面形貌研究证实，ZnO 纳米尖阵列薄膜在 ITO/Glass 衬底上外延生长，并且清楚地显示了在 ITO/Glass 衬底上形成了良好排列的 ZnO 纳米尖阵列。
将制备的样品在不同温度（100、150 和 270°C）下退火。退火后，ZnO 纳米尖阵列的表面形貌没有显示出任何明显的变化。在 ITO/Glass 上制备的 ZnO 纳米尖阵列薄膜的 X 射线衍射图谱在 2θ=34.3°处显示出一个主要峰，对应于（002）面。光致发光光谱显示出强烈的紫外发射强度和较弱的绿光发射强度。Ag/NPB/PMMA/ZnO/ITO 的 J-V 特性表现出良好的整流行为。
