Chalangar Ebrahim, Nur Omer, Willander Magnus, Gustafsson Anders, Pettersson Håkan
Department of Science and Technology, Physics, Electronics and Mathematics, Linköping University, Norrköping, Sweden.
School of Information Technology, Halmstad University, 301 18, Halmstad, Sweden.
Nanoscale Res Lett. 2021 Mar 12;16(1):46. doi: 10.1186/s11671-021-03500-7.
Different ZnO nanostructures can be grown using low-cost chemical bath deposition. Although this technique is cost-efficient and flexible, the final structures are usually randomly oriented and hardly controllable in terms of homogeneity and surface density. In this work, we use colloidal lithography to pattern (100) silicon substrates to fully control the nanorods' morphology and density. Moreover, a sol-gel prepared ZnO seed layer was employed to compensate for the lattice mismatch between the silicon substrate and ZnO nanorods. The results show a successful growth of vertically aligned ZnO nanorods with controllable diameter and density in the designated openings in the patterned resist mask deposited on the seed layer. Our method can be used to fabricate optimized devices where vertically ordered ZnO nanorods of high crystalline quality are crucial for the device performance.
使用低成本的化学浴沉积法可以生长出不同的氧化锌纳米结构。尽管这种技术具有成本效益且灵活,但最终的结构通常是随机取向的,在均匀性和表面密度方面几乎无法控制。在这项工作中,我们使用胶体光刻技术对(100)硅衬底进行图案化处理,以完全控制纳米棒的形态和密度。此外,采用溶胶 - 凝胶法制备的氧化锌种子层来补偿硅衬底与氧化锌纳米棒之间的晶格失配。结果表明,在沉积于种子层上的图案化抗蚀剂掩膜的指定开口中,成功生长出了直径和密度可控的垂直排列的氧化锌纳米棒。我们的方法可用于制造优化的器件,在这些器件中,高质量结晶的垂直有序氧化锌纳米棒对器件性能至关重要。