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高度无序硅纳米线薄膜的光学反射率。

Optical reflectivity from highly disordered Si nanowire films.

机构信息

Istituto per la Microelettronica e i Microsistemi del Consiglio Nazionale delle Ricerche, Rome, Italy.

出版信息

Nanotechnology. 2010 Sep 3;21(35):355701. doi: 10.1088/0957-4484/21/35/355701. Epub 2010 Aug 4.

Abstract

In this work we present a study of the reflectivity from highly disordered silicon nanowire films as a function of the wire size. Arrays of Au-catalyzed Si wires with length and diameter ranging from 0.15-0.2 microm and 30-50 nm up to 20-25 microm and 200-250 nm, respectively, were grown on top of either SiO(2)(1 microm)/Si(100) or Si(100) substrates. The integrated total reflection was measured in the 190-2500 nm spectral range. The results show that, increasing the wire size, the optical behavior of the Si wire film can be gradually tuned from that of an optical coating characterized by a graded effective refractive index to that of an ensemble of diffuse optical reflectors. In addition, we show how the optical analysis provides some important indications concerning the structural properties of the nanowires.

摘要

在这项工作中,我们研究了高度无序的硅纳米线薄膜的反射率随线尺寸的变化。在 SiO(2)(1 微米)/Si(100)或 Si(100)衬底上分别生长了长度和直径分别为 0.15-0.2 微米和 30-50 纳米至 20-25 微米和 200-250 纳米的 Au 催化硅线阵列。在 190-2500nm 的光谱范围内测量了集成总反射率。结果表明,随着线尺寸的增加,硅线薄膜的光学行为可以逐渐从具有渐变有效折射率的光学涂层调谐为漫反射光学反射器的集合。此外,我们还展示了光学分析如何为纳米线的结构特性提供一些重要的指示。

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