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具有最低尖端功函数的纳米结构 LaB6 场发射器。

Nanostructured LaB6 field emitter with lowest apical work function.

机构信息

National Institute for Materials Science, Tsukuba 305-0042, Japan.

出版信息

Nano Lett. 2010 Sep 8;10(9):3539-44. doi: 10.1021/nl101752z.

DOI:10.1021/nl101752z
PMID:20715844
Abstract

LaB(6) nanowires are ideal for applications as an electrical field-induced ion and electron point source due to their miniature dimensions, low work function, as well as excellent electrical, thermal, and mechanical properties. We present here a reliable method to fabricate and assemble single LaB(6) nanowire-based field emitters of different crystal orientations. The atomic arrangement, emission brightness from each crystal plane, and field emission stability have been characterized using field ion microscopy (FIM) and field emission microscopy (FEM). It is found that the 001 oriented LaB(6) nanowire emitter has the highest field emission symmetry while the 012 oriented LaB(6) nanowire has the lowest apical work function. The field emission stability from the single LaB(6) nanowire emitter is significantly better than either the LaB(6) needle-type emitter or W cold field emitters.

摘要

LaB(6) 纳米线由于其微小的尺寸、低功函数以及优异的电学、热学和力学性能,非常适合作为电场诱导的离子和电子点源的应用。我们在这里提出了一种可靠的方法来制造和组装不同晶向的单根 LaB(6)纳米线场发射器。使用场离子显微镜(FIM)和场发射显微镜(FEM)对原子排列、每个晶面的发射亮度以及场发射稳定性进行了表征。结果发现,001 取向的 LaB(6)纳米线发射器具有最高的场发射对称性,而 012 取向的 LaB(6)纳米线具有最低的尖端功函数。单根 LaB(6)纳米线发射器的场发射稳定性明显优于 LaB(6)针型发射器或 W 冷场发射器。

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