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基于 SAM 的隧道结阵列中的电荷输运和整流。

Charge transport and rectification in arrays of SAM-based tunneling junctions.

机构信息

Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street, Cambridge, Massachusetts 02138, USA.

出版信息

Nano Lett. 2010 Sep 8;10(9):3611-9. doi: 10.1021/nl101918m.

DOI:10.1021/nl101918m
PMID:20718403
Abstract

This paper describes a method of fabrication that generates small arrays of tunneling junctions based on self-assembled monolayers (SAMs); these junctions have liquid-metal top-electrodes stabilized in microchannels and ultraflat (template-stripped) bottom-electrodes. The yield of junctions generated using this method is high (70-90%). The junctions examined incorporated SAMs of alkanethiolates having ferrocene termini (11-(ferrocenyl)-1-undecanethiol, SC(11)Fc); these junctions rectify currents with large rectification ratios (R), the majority of which fall within the range of 90-180. These values are larger than expected (theory predicts R <or= 20) and are larger than previous experimental measurements. SAMs of n-alkanethiolates without the Fc groups (SC(n-1)CH(3), with n = 12, 14, 16, or 18) do not rectify (R ranged from 1.0 to 5.0). These arrays enable the measurement of the electrical characteristics of the junctions as a function of chemical structure, voltage, and temperature over the range of 110-293 K, with statistically large numbers of data (N = 300-800). The mechanism of rectification with Fc-terminated SAMs seems to be charge transport processes that change with the polarity of bias: from tunneling (at one bias) to hopping combined with tunneling (at the opposite bias).

摘要

本文描述了一种基于自组装单分子层(SAMs)生成隧道结小阵列的制造方法;这些结具有稳定在微通道中的液态金属顶电极和超平(模板剥离)底电极。使用这种方法生成的结的产率很高(70-90%)。检查的结包含具有二茂铁末端的烷硫醇 SAM(11-(二茂铁基)-1-十一硫醇,SC(11)Fc);这些结具有大整流比(R)的电流整流,其中大多数落在 90-180 范围内。这些值大于预期(理论预测 R <或= 20),并且大于以前的实验测量值。没有 Fc 基团的 n-烷硫醇 SAM(SC(n-1)CH(3),n = 12、14、16 或 18)不整流(R 范围为 1.0 至 5.0)。这些阵列允许测量结的电特性作为化学结构、电压和温度的函数,范围为 110-293 K,具有统计上大量的数据(N = 300-800)。具有 Fc 端 SAM 的整流机制似乎是随着偏置极性而变化的电荷传输过程:从隧道(在一个偏置)到隧穿结合跳跃(在相反偏置)。

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