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强微介电环境对(n,m)单壁碳纳米管带隙的影响。

Strong micro-dielectric environment effect on the band gaps of (n,m)single-walled carbon nanotubes.

机构信息

Department of Applied Chemistry, Graduate School of Engineering, Kyushu University, Motooka 744, Fukuoka 819-0395, Japan.

出版信息

J Am Chem Soc. 2010 Sep 22;132(37):13072-7. doi: 10.1021/ja105980a.

Abstract

The electronic states of carbon nanotubes are one of the most fundamental properties of the nanotubes. We now describe the finding that the band gaps of (n,m)SWNTs are strongly affected by the change in microdielectric environments around the isolated nanotubes. In situ photoluminescence (PL) spectroelectrochemistry of the films containing 15 isolated (n,m)single-walled carbon nanotubes (SWNTs) cast on ITO electrodes in organic solvents including DMSO, acetonitirile, DMF, THF, and chloroform was completed and then the oxidation and reduction potentials, and band gaps (ΔE(electr)) of the (n,m)SWNTs in the solvents were determined. We have discovered that the ΔE(electr) of the (n,m)SWNTs become greater as the solvent dielectric constants decreased, which is in sharp contrast to the optical band gaps (ΔE(opt)) that show virtually no solvent dependence. Such a strong solvent dependence of the electrochemical band gaps is due to the difference in the solvation energy of the charged SWNTs produced during the electrochemical processes. The ΔE(electr) of both mod types of the SWNTs, mod = 1 and mod = 2, linearly increased versus the reciprocal of the tube diameter, which agrees with the theory. Moreover, the states of the π-electrons in the SWNTs were evaluated from the dependence of the band gaps on the diameter of the SWNTs. Furthermore, the states of the π-electrons on the sidewalls of the SWNTs were evaluated using the γ(0) values, a parameter representing the measure of the stability or the degree of delocalization of π-electrons in the sidewall of the SWNTs, and revealed that the γ(0) values of the mod = 1 and mod = 2 SWNTs increased with a decrease in the dielectric constants of the solvents in the range of 38-79. This study has enabled us to understand the essential electronic properties of the carbon nanotubes.

摘要

碳纳米管的电子态是纳米管最基本的性质之一。我们现在描述的发现是,(n,m)单壁碳纳米管(SWNTs)的能带隙强烈受到孤立纳米管周围微介电环境变化的影响。在有机溶剂(包括 DMSO、乙腈、DMF、THF 和氯仿)中包含 15 个孤立(n,m)单壁碳纳米管(SWNTs)的薄膜的原位光致发光(PL)光谱电化学已完成,然后确定了溶剂中(n,m)SWNTs 的氧化和还原电位以及能带隙(ΔE(electr))。我们发现,随着溶剂介电常数的降低,(n,m)SWNTs 的ΔE(electr)变得更大,这与实际上没有溶剂依赖性的光学带隙(ΔE(opt))形成鲜明对比。电化学带隙的这种强烈溶剂依赖性是由于在电化学过程中产生的带电 SWNTs 的溶剂化能的差异所致。两种类型的 SWNTs,mod = 1 和 mod = 2 的ΔE(electr)都与管直径的倒数成线性关系增加,这与理论相符。此外,还可以从带隙对 SWNTs 直径的依赖性来评估 SWNTs 中π电子的状态。此外,还使用参数γ(0)值评估了 SWNTs 侧壁上的π电子的状态,该参数表示 SWNTs 侧壁上π电子的稳定性或离域程度的度量,结果表明,mod = 1 和 mod = 2 SWNTs 的γ(0)值随着溶剂介电常数的降低而增加,范围为 38-79。这项研究使我们能够了解碳纳米管的基本电子特性。

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