通过CF4等离子体氟化和氨基功能化制备的n型碳纳米管的电子特性。
Electronic properties of n-type carbon nanotubes prepared by CF4 plasma fluorination and amino functionalization.
作者信息
Plank Natalie O V, Forrest Gavin A, Cheung Rebecca, Alexander Andrew J
机构信息
School of Engineering and Electronics, The Scottish Microelectronics Centre, University of Edinburgh, King's Buildings, West Mains Road, Edinburgh, EH9 3JF, UK.
出版信息
J Phys Chem B. 2005 Dec 1;109(47):22096-101. doi: 10.1021/jp055103o.
Single-walled carbon nanotubes (SWNTs) have been fluorinated by CF4 plasma exposure and further functionalized with 1,2-diaminoethane. The degree of amino functionalization is dependent on the degree of initial fluorination rather than oxygen or carbon defects. Reaction at both ends of 1,2-diaminoethane was observed to increase with fluorine content. Back-gated SWNT devices have shown p-type semiconducting behavior for CF4-functionalized SWNTs and n-type semiconducting behavior for amino-functionalized SWNTs. The degree of n-type behavior increases with the amount of nitrogen attached to the SWNTs.
单壁碳纳米管（SWNTs）通过CF4等离子体暴露进行氟化，并进一步用1,2 - 二氨基乙烷功能化。氨基功能化的程度取决于初始氟化的程度，而不是氧或碳缺陷。观察到1,2 - 二氨基乙烷两端的反应随氟含量增加。背栅SWNT器件对CF4功能化的SWNTs表现出p型半导体行为，对氨基功能化的SWNTs表现出n型半导体行为。n型行为的程度随附着在SWNTs上的氮量增加而增加。
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