Graduate School of Engineering Sciences, Kyushu University, Fukuoka, Japan.
Nanoscale. 2010 Sep;2(9):1708-14. doi: 10.1039/c0nr00170h. Epub 2010 Jun 25.
Directional controllability of single-walled carbon nanotubes (SWNTs) is an important issue for future nanoelectronics applications. For direct integration of carbon nanotubes with modern electronics, aligned growth of carbon nanotubes on SiO(2)/Si is desirable. We developed a new method to horizontally align SWNTs directly on SiO(2)/Si substrate by creating trenches on Si(100) through anisotropic etching followed by thermal oxidation. The V-shaped trenches highly improved the alignment of SWNTs and the degree of alignment is comparable to the step-templated alignment of carbon nanotubes on crystals. The trenches also improved the density of aligned nanotubes due to the combination of "trench-guided" and gas-flow guided alignment. Our new insights on carbon nanotube alignment on SiO(2)/Si will greatly contribute to future large-scale nanoelectronic applications.
单壁碳纳米管（SWNTs）的定向可控性是未来纳米电子学应用的一个重要问题。为了将碳纳米管与现代电子学直接集成，在 SiO(2)/Si 上进行碳纳米管的定向生长是理想的。我们通过在 Si(100)上进行各向异性刻蚀，然后进行热氧化，开发了一种在 SiO(2)/Si 衬底上直接水平排列 SWNTs 的新方法。V 形沟槽极大地提高了 SWNTs 的排列程度，其排列程度可与晶体上的碳纳米管的阶梯模板排列相媲美。由于“沟槽引导”和气流引导排列的结合，沟槽还提高了定向纳米管的密度。我们在 SiO(2)/Si 上对碳纳米管排列的新见解将极大地促进未来大规模纳米电子学应用的发展。
