Nanophotonics Laboratory, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore.
Opt Lett. 2010 Sep 15;35(18):3075-7. doi: 10.1364/OL.35.003075.
We studied the loss compensation of surface plasmon polaritons (SPPs) with InGaAsP quantum wells at telecom wavelength. The quantum wells are buried in the vicinity of a thin Au film. The propagation length of short-range SPPs increases drastically with the gain coefficient of quantum wells, generated by a forward bias. The elongation of SPP propagation is experimentally observed via long-range SPPs, which strongly couple with the short-range SPPs. This study paves a way for electrically manipulated amplification of SPPs in plasmonic circuits.
我们研究了在电信波长下具有 InGaAsP 量子阱的表面等离激元（SPP）的损耗补偿。量子阱埋在薄金膜附近。通过正向偏压产生的量子阱的增益系数，使短程 SPP 的传播长度急剧增加。通过与短程 SPP 强烈耦合的远程 SPP ，实验观察到 SPP 传播的延长。这项研究为在等离子体电路中电控制 SPP 的放大铺平了道路。
