Desmulliez M P, Wherrett B S, Snowdon J F
Appl Opt. 1994 Mar 10;33(8):1368-75. doi: 10.1364/AO.33.001368.
In constructing symmetric self-electro-optic-effect-device-based, two-dimensional information processing circuits, it is necessary to know the nonuniformity that can be tolerated of the reflectivity responses of the arrays of devices. It is also necessary to know the allowable nonuniformity of the passive optical components used to direct beam arrays onto and between the active symmetric self-electro-optic-effect devices. A method for determining the mutual tolerances is presented with examples of the volumes of acceptable operation in the parameter space of the circuits. Leakage between devices is considered, which leads to acceptable regimes for those parameters that can be adjusted once the circuit has been constructed and to narrower regimes in which high clock and cycle rates can be achieved.
在构建基于对称自电光效应器件的二维信息处理电路时，有必要了解器件阵列反射率响应所能容忍的不均匀性。还需要知道用于将光束阵列引导到有源对称自电光效应器件上以及在这些器件之间的无源光学元件的允许不均匀性。本文提出了一种确定相互容差的方法，并给出了电路参数空间中可接受操作范围的示例。考虑了器件之间的泄漏情况，这导致对于那些在电路构建后可以调整的参数有可接受的范围，而对于能够实现高时钟和循环速率的参数则有更窄的范围。
