Rutgers Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA.
Phys Rev Lett. 2010 May 28;104(21):217601. doi: 10.1103/PhysRevLett.104.217601. Epub 2010 May 24.
By correlating room temperature conductive atomic force microscopy with low temperature electrostatic force microscopy images of the same sample region, we demonstrate that nanoscale electric conduction between a sharp tip and the surface of ferroelectric HoMnO3 is intrinsically modulated by the polarization of ferroelectric domains. Conductance spectra reveal that the electric conduction is described by polarization-induced Schottky-like rectification at low bias, but dominated by a space-charge limited conduction mechanism at high bias. Our observation demonstrates visualization of ferroelectric domain structure by electric conduction, which may be used for nondestructive readout of nanoscale ferroelectric memories and/or ferroelectric sensors.
通过将室温导电原子力显微镜与同一样品区域的低温静电力显微镜图像相关联,我们证明了在尖锐尖端和铁电 HoMnO3 表面之间的纳米级电传导本质上受到铁电畴极化的调制。电导谱表明,在低偏压下,电导由极化诱导的肖特基型整流来描述,但在高偏压下,由空间电荷限制传导机制主导。我们的观察结果证明了通过电导对铁电畴结构进行可视化,这可用于无损读取纳米级铁电存储器和/或铁电传感器。