CMPMSD, Brookhaven National Laboratory, Upton, New York 11973, USA.
Phys Rev Lett. 2010 Jul 23;105(4):046804. doi: 10.1103/PhysRevLett.105.046804. Epub 2010 Jul 22.
The magnetotransport in single layer graphene has been experimentally investigated in magnetic fields up to 18 T as a function of temperature. A pronounced T dependence is observed for T≲50 K, which is either metallic, or insulating, depending on the filling factor ν. The metal-insulator transition (MIT) occurs at |ν{c}|∼0.65 and in the regime of the dissipative transport, where the longitudinal resistance Rxx>1/2R{K}. The critical resistivity (Rxx per square) is ρ{xx}(ν{c})≈1/2R{K} and is correlated with the appearance of zero plateau in Hall conductivity σ{xy}(ν) and peaks in σ{xx}(ν). This leads us to construct a universal low-T (n, B) phase diagram of this quantum phase transition.
已针对温度,在高达 18 T 的磁场中对单层石墨烯中的磁输运进行了实验研究。在 T≲50 K 的范围内观察到明显的 T 依赖性,其表现为金属态或绝缘态,这取决于填充因子 ν。金属-绝缘体转变(MIT)发生在 |ν{c}|∼0.65 处,并且处于耗散输运的范围内,此时纵向电阻 Rxx>1/2R{K}。临界电阻率(每平方的 Rxx)为 ρ{xx}(ν{c})≈1/2R{K},并且与霍尔电导率 σ{xy}(ν)中的零平台出现以及 σ{xx}(ν)中的峰值相关。这使我们能够构建这种量子相变的通用低 T(n,B)相图。