Spin-polarized to valley-polarized transition in graphene bilayers at ν=0 in high magnetic fields.

We investigate the transverse electric field (E) dependence of the ν=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ρ(xx) measured at ν=0 shows an insulating behavior which is strongest in the vicinity of E=0, as well as at large E fields. At a fixed perpendicular magnetic field (B), the ν=0 QHS undergoes a transition as a function of the applied E, marked by a minimum, temperature-independent ρ(xx). This observation is explained by a transition from a spin-polarized ν=0 QHS at small E fields to a valley- (layer-)polarized ν=0 QHS at large E fields. The E field value at which the transition occurs follows a linear dependence on B.