CAESR, Clarendon Laboratory, Department of Physics, Oxford University, Oxford OX1 3PU, United Kingdom.
Phys Rev Lett. 2010 Aug 6;105(6):067601. doi: 10.1103/PhysRevLett.105.067601.
Donors in silicon hold considerable promise for emerging quantum technologies, due to their uniquely long electron spin coherence times. Bismuth donors in silicon differ from more widely studied group V donors, such as phosphorous, in several significant respects: They have the strongest binding energy (70.98 meV), a large nuclear spin (I=9/2), and a strong hyperfine coupling constant (A=1475.4 MHz). These larger energy scales allow us to perform a detailed test of theoretical models describing the spectral diffusion mechanism that is known to govern the electron spin decoherence of P donors in natural silicon. We report the electron-nuclear double resonance spectra of the Bi donor, across the range 200 MHz to 1.4 GHz, and confirm that coherence transfer is possible between electron and nuclear spin degrees of freedom at these higher frequencies.
硅中的供体在新兴的量子技术中具有相当大的潜力，因为它们具有独特的长电子自旋相干时间。硅中的铋供体与更广泛研究的磷等第五主族供体在几个重要方面有所不同：它们具有最强的结合能（70.98 毫电子伏特）、大核自旋（I=9/2）和强超精细耦合常数（A=1475.4 兆赫兹）。这些更大的能量尺度使我们能够对描述已知控制天然硅中 P 供体电子自旋退相干的谱扩散机制的理论模型进行详细测试。我们报告了 Bi 供体在 200MHz 至 1.4GHz 范围内的电子-核双共振谱，并证实了在这些更高频率下电子和核自旋自由度之间的相干转移是可能的。
