Mostafa Ahmad, Medraj Mamoun
Mechanical and Materials Engineering Department, Khalifa University of Science and Technology, Masdar Institute, Masdar City 54224, UAE.
Mechanical Engineering Department, Concordia University, 1515 Rue Sainte Catherine west, Montreal, QC H3G 2W1, Canada.
Materials (Basel). 2017 Jun 20;10(6):676. doi: 10.3390/ma10060676.
Fabrication of solar and electronic silicon wafers involves direct contact between solid, liquid and gas phases at near equilibrium conditions. Understanding of the phase diagrams and thermochemical properties of the Si-dopant binary systems is essential for providing processing conditions and for understanding the phase formation and transformation. In this work, ten Si-based binary phase diagrams, including Si with group IIIA elements (Al, B, Ga, In and Tl) and with group VA elements (As, Bi, N, P and Sb), have been reviewed. Each of these systems has been critically discussed on both aspects of phase diagram and thermodynamic properties. The available experimental data and thermodynamic parameters in the literature have been summarized and assessed thoroughly to provide consistent understanding of each system. Some systems were re-calculated to obtain a combination of the best evaluated phase diagram and a set of optimized thermodynamic parameters. As doping levels of solar and electronic silicon are of high technological importance, diffusion data has been presented to serve as a useful reference on the properties, behavior and quantities of metal impurities in silicon. This paper is meant to bridge the theoretical understanding of phase diagrams with the research and development of solar-grade silicon production, relying on the available information in the literature and our own analysis.
太阳能和电子硅片的制造涉及在接近平衡条件下的固相、液相和气相之间的直接接触。了解硅 - 掺杂剂二元体系的相图和热化学性质对于提供加工条件以及理解相的形成和转变至关重要。在这项工作中，对十个基于硅的二元相图进行了综述，包括硅与IIIA族元素（铝、硼、镓、铟和铊）以及与VA族元素（砷、铋、氮、磷和锑）的相图。对这些体系中的每一个都从相图和热力学性质两个方面进行了批判性讨论。对文献中可用的实验数据和热力学参数进行了全面总结和评估，以提供对每个体系的一致理解。对一些体系进行了重新计算，以获得最佳评估相图和一组优化的热力学参数的组合。由于太阳能和电子硅的掺杂水平具有很高的技术重要性，因此给出了扩散数据，作为关于硅中金属杂质的性质、行为和数量的有用参考。本文旨在依靠文献中的现有信息和我们自己的分析，在相图的理论理解与太阳能级硅生产的研发之间架起桥梁。
